sot-89-3l 1. base 2. collector 3. emitter transistor features z power transistor z excellent dc current gain z low collector-emitter saturation voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50a,i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-50a,i c =0 -6 v collector cut-off current i cbo v cb =-20v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.5 a dc current gain h fe v ce =-2v, i c =-0.5a 82 390 collector-emitter saturation voltage v ce(sat) i c =-1.5a,i b =-0.15a -0.45 v collector output capacitance c ob v cb =-20v,i e =0, f=1mhz 60 pf transition frequency f t v ce =-6v,i c =-50ma, f=30mhz 120 mhz classification of h fe rank p q r range 82 C 180 120 C 270 180 C 390 marking bfp bfq bfr symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -6 v i c collector current -3 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sb1 308
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